Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24A
Rds On (Max) @ Id, Vgs 7.8 mOhm @ 24A, 5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 74nC @ 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 10V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 8-PowerWDFN