Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 12.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 10V
Power - Max 1.7W, 2W
Mounting Type Surface Mount
Package / Case 8-PowerSOIC (0.173", 4.40mm)