Specification
FET Type 2 N and 2 P-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) @ Vds 290pF @ 10V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)