Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 17A
Rds On (Max) @ Id, Vgs 128 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 25V
Power - Max 30W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad