Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 15A, 30A
Rds On (Max) @ Id, Vgs 9.4 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 7.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1190pF @ 10V
Power - Max 10W, 20W
Mounting Type -
Package / Case 8-WFDFN Exposed Pad