Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Rds On (Max) @ Id, Vgs 9.1 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 7.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1180pF @ 10V
Power - Max 30W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad