Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 65A (Ta)
Rds On (Max) @ Id, Vgs 2 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 49nC @ 4.5V
Input Capacitance (Ciss) @ Vds 7650pF @ 10V
Power - Max 65W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad