Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 15A, 32A
Rds On (Max) @ Id, Vgs 9.2 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 6.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1130pF @ 10V
Power - Max 10W, 20W
Mounting Type Surface Mount
Package / Case 8-WFDFN