Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs 4 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 740pF @ 10V
Power - Max -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3