Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 2.56mA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2940pF @ 10V
Power - Max 2.8W
Mounting Type -
Package / Case 8-SMD, Flat Lead