Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 26A
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 4.38mA
Gate Charge (Qg) @ Vgs 28nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5180pF @ 10V
Power - Max 2.9W
Mounting Type -
Package / Case -