MOSFET, N-CH, DUAL, 60V, SSMINI6-FE-B; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:125mW; Transistor Case Style:SOT-666; No. of Pins:6; O
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 12pF @ 3V
Power - Max 125mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
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INR 244
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Price : 244