Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 1.4µA @ 10V
Current Drain (Id) 10mA
Voltage - Cutoff (VGS off) @ Id 3.5V @ 1µA
Power - Max 200mW
Input Capacitance (Ciss) @ Vds 5pF @ 10V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3