Specification
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 600µA @ 10V
Current Drain (Id) 20mA
Voltage - Cutoff (VGS off) @ Id 1.5V @ 10µA
Power - Max 300mW
Input Capacitance (Ciss) @ Vds 10pF @ 10V
Resistance - RDS(On) 300 Ohm
Mounting Type Through Hole
Package / Case 3-SIP