Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 90V
Current - Continuous Drain (Id) @ 25°C 2A, 1.1A
Rds On (Max) @ Id, Vgs 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 70pF @ 25V
Power - Max 500mW
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead