Junction Field Effect Transistors,100mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) -
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 210µA @ 5V
Current Drain (Id) 1mA
Voltage - Cutoff (VGS off) @ Id 200mV @ 1µA
Power - Max 100mW
Input Capacitance (Ciss) @ Vds 3.5pF @ 5V
Resistance - RDS(On) -
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads