Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 113nC @ 10V
Input Capacitance (Ciss) @ Vds 5880pF @ 25V
Power - Max 3.2W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad (5 Lead)