MOSFET, N CH, 30V, 12.7A, SO-8FL; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.63V; Power Dissipation Pd:48W; Transistor Case Style:SOIC; No. of Pins:5; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 91A (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 22nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4850pF @ 15V
Power - Max 930mW
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad (5 Lead)