Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1072pF @ 6V
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead