MOSFET, P CH, 60V, 15.5A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-15.5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.143ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:65W; Transistor Case Style:TO-252; No. of Pins:3; Operati
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15.5A
Rds On (Max) @ Id, Vgs 150 mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 5V
Input Capacitance (Ciss) @ Vds 1190pF @ 25V
Power - Max 65W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63