Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15.5A
Rds On (Max) @ Id, Vgs 150 mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 5V
Input Capacitance (Ciss) @ Vds 1190pF @ 25V
Power - Max 65W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA