Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Rds On (Max) @ Id, Vgs 850 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 1095pF @ 25V
Power - Max 35W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack