Transistors - Bipolar (BJT) -Single & Arrays,NPN,500mA,80V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 250mA, 1V
Power - Max 1W
Frequency - Transition 50MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body Formed Leads