Junction Field Effect Transistors,30V,350mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds 25mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 2V @ 10nA
Power - Max 350mW
Input Capacitance (Ciss) @ Vds 10pF @ 15V (VGS)
Resistance - RDS(On) 60 Ohm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Buying Option 1
1
-
INR 463.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 463.6