Transistors - Bipolar (BJT) -Single & Arrays,NPN,500mA,80V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Power - Max 225mW
Frequency - Transition 150MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3