Transistors - Bipolar (BJT) -Single & Arrays,NPN,60mA,160V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 60mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 225mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3