Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 PNP,100mA,50V, 60V
Specification
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V, 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 120 @ 1mA, 6V
Power - Max 500mW
Frequency - Transition 140MHz
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Buying Option 1
1
-
INR 280.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 280.6