Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,200mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Power - Max 200mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Buying Option 1
1
-
INR 91.5
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 91.5
Buying Option 2
20
-
INR 2189.9
100
-
INR 1555.5
500
-
INR 1250.5
1000
-
INR 1085.8
3000
-
INR 1012.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 43798