Transistors - Bipolar (BJT) -Single & Arrays,NPN,10A,80V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Power - Max 2W
Frequency - Transition 50MHz
Mounting Type Through Hole
Package / Case TO-220-3