Transistors - Bipolar (BJT) -Single & Arrays,1 NPN, 1 PNP - Pre-Biased (Dual),100mA,50V
Specification
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V / 100 @ 10mA, 5V
Power - Max 300mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363