Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tmb)
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) @ Vgs 31.3nC @ 10V
Input Capacitance (Ciss) @ Vds 2256pF @ 15V
Power - Max 106W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK