Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tmb)
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 212nC @ 10V
Input Capacitance (Ciss) @ Vds 12493pF @ 15V
Power - Max 306W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB