Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1295pF @ 40V
Power - Max 65W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad