Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 24A (Tmb)
Rds On (Max) @ Id, Vgs 23 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Gate Charge (Qg) @ Vgs 8.4nC @ 10V
Input Capacitance (Ciss) @ Vds 520pF @ 20V
Power - Max 25W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK