Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Rds On (Max) @ Id, Vgs 16.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) @ Vds 2744pF @ 50V
Power - Max 117W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK