PSMN Series 100 V 9 mO 300 W N-Channel TrenchMOS Transistor - LFPAK
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Rds On (Max) @ Id, Vgs 11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 40V
Power - Max 117W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK