Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 39A (Ta)
Rds On (Max) @ Id, Vgs 10.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 678pF @ 12V
Power - Max 30W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK