Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta)
Rds On (Max) @ Id, Vgs 490 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 0.98nC @ 4.5V
Input Capacitance (Ciss) @ Vds 65pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case 3-XFDFN Exposed Pad