Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Rds On (Max) @ Id, Vgs 447 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds 116pF @ 10V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case 3-XFDFN Exposed Pad