FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Rds On (Max) @ Id, Vgs | 447 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 116pF @ 10V |
Power - Max | 360mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN Exposed Pad |