Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.8A
Rds On (Max) @ Id, Vgs 235 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) @ Vds 475pF @ 80V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA