Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 480mA (Ta)
Rds On (Max) @ Id, Vgs 850 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) @ Vgs 1.14nC @ 4.5V
Input Capacitance (Ciss) @ Vds 87pF @ 10V
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416