Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 55 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1000pF @ 10V
Power - Max 530mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457