Transistors - Bipolar (BJT) -Single & Arrays,NPN + Diode (Isolated),2A,50V
Specification
Transistor Type NPN + Diode (Isolated)
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 370mV @ 300mA, 3A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Power - Max 1W
Frequency - Transition 100MHz
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)