Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Rds On (Max) @ Id, Vgs 70 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 5V
Input Capacitance (Ciss) @ Vds 785pF @ 10V
Power - Max 490mW
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad