RF JFET, N CH, 25V, 40MA, 3-SOT-23; Tran; RF JFET, N CH, 25V, 40MA, 3-SOT-23; Transistor Type:RF JFET; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Max:40mA; Gate-Source Cutoff Voltage Vgs(off) Max:-2V; Power Dissipation Pd:250mW; No. of Pins:3; MSL:-
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) 25V
Current - Drain (Idss) @ Vds 40mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 6V @ 1µA
Power - Max 250mW
Input Capacitance (Ciss) @ Vds 30pF @ 10V (VGS)
Resistance - RDS(On) 12 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 111.02
10
-
INR 111.02
25
-
INR 111.02
100
-
INR 111.02
250
-
INR 111.02
500
-
INR 101.87
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 111.02