Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta)
Rds On (Max) @ Id, Vgs 230 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max 30W
Mounting Type Through Hole
Package / Case TO-220-3 Isolated Tab