Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1230pF @ 25V
Power - Max 6.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)