Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 21.2A (Ta)
Rds On (Max) @ Id, Vgs 7.7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 64nC @ 10V
Input Capacitance (Ciss) @ Vds 2985pF @ 25V
Power - Max 6.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)