Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 4.66A (Ta)
Rds On (Max) @ Id, Vgs 120 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 1mA
Gate Charge (Qg) @ Vgs 7.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 528pF @ 12.8V
Power - Max 5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)