Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 21nC @ 5V
Input Capacitance (Ciss) @ Vds 2010pF @ 10V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK